S3PDB85 Datasheet | Sirectifier Semiconductors

Three Phase Rectifier Modules Dimensions in mm (1mm=0.0394") Type S3PDB85N08 S3PDB85N12 S3PDB85N14 S3PDB85N16 S3PDB85N18 VRSM V 900 1300 1500 1700 1900 VRRM V 800 1200 1400 1600 1800 .. + - ~~~ Symbol Idav TC=100o C, module TVJ=45 C VR=0 TVJ=TVJM VR=0 TVJ=45o C VR=0 TVJ=TVJM VR=0 o Test Conditions Maximum Ratings 85 Unit A IFSM t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 750 820 600 700 2800 2820 2200 2250 -40...+150 150 -40...+125 It As TVJ TVJM Tstg VISOL Md 50/60Hz, RMS _ IISOL<1m A t=1min t=1s o 2500 3000 _ 5+15% _ 44+15% 110 V~ Nm lb.in. g Mounting torque (M5) (10-32 UNF) typ. Weight Three Phase Rectifier Modules Symbol IR VF VTO .. Test Conditions VR=VRRM; TVJ=25 C VR=VRRM; TVJ=TVJM IF=150A; TVJ=25o C For power-loss calculations only TVJ=TVJM per diode per module per diode per module Creeping distance on surface Creepage distance in air Max. allowable acceleration o Characteristic Values _ 0.5 < _10 < _ 1.6 < 0.8 6 1.3 0.22 1.6 0.27 16.1 7.5 50 Unit m A V V m K/W K/W mm mm m/s2 r T Rth JC Rth JK d S d A a Features - Package with copper base plate - Isolation voltage 3000 V~ - Planar passivated chips - 1/4" fast-on power...