SDT320 Datasheet | Sirectifier Semiconductors

.. STD/SDT320 Thyristor-Diode Modules, Diode-Thyristor Modules Dimensions in mm (1mm=0.0394") Type VRSM VDSM V STD/SDT320GK08 900 STD/SDT320GK12 1300 STD/SDT320GK14 1500 STD/SDT320GK16 1700 STD/SDT320GK18 1900 VRRM VDRM V 800 1200 1400 1600 1800 Symbol ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85o C; 180o sine TVJ=45o C VR=0 TVJ=TVJM VR=0 TVJ=45o C VR=0 TVJ=TVJM VR=0 TVJ=TVJM f=50Hz, tp=200us VD=2/3VDRM IG=1A di G/dt=1A/us Test Conditions Maximum Ratings 500 320 Unit A ITSM, IFSM t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine repetitive, IT=960A 9200 9800 8000 8600 420000 400000 320000 306000 100 A i dt A2s (di/dt)cr A/us non repetitive, IT=320A 500 1000 120 60 20 10 -40...+140 140 -40...+125 V/us W W V o (dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight TVJ=TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) TVJ=TVJM IT=ITAVM tp=30us tp=500us 50/60Hz, RMS _ IISOL<1m A t=1min t=1s 3000 3600 2.5-5/22-44 12-15/106-132 320 V~ Nm/lb.in. g Mounting torque (M5) Terminal connection torque (M8) Typical including screws .. STD/SDT320 Thyristor-Diode Modules, Diode-Thyristor Modules Test Conditions Characteristic Values 70 40 Unit m A m A V V m V m A V m A m A m A us us u C A K/W K/W mm mm m/s2 Symbol IRRM IDRM VT, VF VTO r T VGT IGT VGD IGD IL IH tgd tq QS IRM Rth JC Rth JK d S d A a VD=6V; VD=6V; TVJ=TVJM; o TVJ=TVJM; VR=VRRM; VD=VDRM IT, IF=600A; TVJ=25o C For power-loss calculations only (TVJ=140 C) o o 1.32 0.8 0.82 TVJ=25 C TVJ=-40o C TVJ=25o C TVJ=-40o C VD=2/3VDRM 2 3 150 200 0.25 10 TVJ=25 C; tp=30us; VD=6V IG=0.45A; di G/dt=0.45A/us TVJ=25o C; VD=6V; RGK= TVJ=25 C; VD=1/2VDRM IG=1A; di G/dt=1A/us TVJ=TVJM; IT=300A; tp=200us; -di/dt=10A/us VR=100V; dv/dt=50V/us; VD=2/3VDRM TVJ=125o C; IT, IF=400A; -di/dt=50A/us typ. o 200 150 2 200 760 275 per thyristor/diode; DC current per module per thyristor/diode; DC...