SG45N12T Datasheet | Sirectifier Semiconductors

Discrete IGBTs Dimensions TO-247AD .. Dim. A B Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 C(TAB) G=Gate, C=Collector, E=Emitter,TAB=Collector C D E F G H J K L M N Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA o o Test Conditions TJ=25 C to 150 C TJ=25o C to 150o C; RGE=1 M ; Continuous Transient TC=25o C; limited by leads TC=90o C TC=25o C, 1 ms Maximum Ratings 1200 1200 ±20 ±30 75 45 180 ICM=90 @ 0.8 VCES 300 -55...+150 150 -55...+150 Unit V V A A W o VGE=15V; TVJ=125o C; RG=5 (RBSOA) Clamped inductive load PC TC=25o C TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10s Maximum Tab temperature for soldering SMD devices for 10s Md Weight Mounting torque (M3) 300 260 1.13/10 6 o C C o Nm/Ib.in. g (TJ=25o C, unless otherwise specified) Symbol BVCES VGE(th) ICES IGES VCE(sat) IC=1m A; VGE=0V IC=750u A; VCE=VGE VCE=VCES; VGE=0V; TJ=25 C TJ=125 C o o Test Conditions Characteristic Values min. 1200 2.5 5.0 250 2 ±100 2.5 typ. max. Unit V V u A m A n A V VCE=0V; VGE=±20V IC=IC90; VGE=15V Discrete IGBTs (TJ=25o C, unless otherwise specified) .. Symbol Test Conditions Characteristic Values min. typ. 44 max. Unit gts IC=IC90; VCE=10V Pulse test, t 300us, duty cycle 2% IC(ON) Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Rth JC Rth...