SID200N12 Datasheet | Sirectifier Semiconductors

NPT IGBT Modules Dimensions in mm (1mm = 0.0394") .. Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions TC = 25o C, unless otherwise specified Values 1200 Units V A A V o TC= 25(80) C TC= 25(80)o C, t P =1ms _ Tstg TOPERATION < o 200(180) 400(360) _ +20 _ 40...+150(125) 2500 200(130) 400(360) 1450 260(180) 400(360) 1800 AC, 1min Visol Inverse Diode IF = -IC IFRM V A A A A A A TC= 25(80)o C TC= 25(80)o C, t P =1ms IFSM t P =10ms; sin.;Tj=150o C Freewheeling diode TC= 25(80)o C IF = -IC IFRM TC= 25(80)o C, t P =1ms IFSM t P =10ms; sin.;Tj=150o C NPT IGBT Modules Characteristics Symbol IGBT VGE(th) ICES VCE(TO) r CE .. VCE(sat) Cies Coes Cres LCE RCC'+EE' Conditions VGE = VCE, IC =6m A VGE = 0; VCE = VCES; Tj = 25(125)o C Tj = 25(125)o C VGE = 15V, Tj = 25(125)o C IC =150A; VGE = 15V; chip level under following conditions VGE = 0, VCE = 25V, f = 1MHz TC = 25o C, unless otherwise specified min. 4.5 typ. max. Units V m A V m V n F n H m ns ns ns ns m J V V m A u C m J V V m A u C m J K/W K/W K/W K/W Nm Nm g td(on) tr td(off) tf Eon(Eoff) Inverse Diode under following conditions: VF = VEC IF = 150A; VGE = 0V; Tj = 25(125)o C V(TO) Tj = 125o C r T Tj = 125o C IRRM IF = 100A; Tj = 25(125)o C Qrr di/dt = A/us Err VGE = V FWD under following conditions: VF = VEC IF = 100A; VGE = 0V; Tj = 25(125)o C V(TO) Tj = 125o C r T Tj = 125o C IRRM IF = 150A; Tj = 25o C Qrr di/dt = A/us Err VGE = V Thermal Characteristics Rth(j-c) per IGBT Rth(j-c)D per Inverse Diode Rth(j-c)FD per FWD Rth(c-s) per module Mechanical Data Ms to heatsink M6 Mt to terminals M6 w res., terminal-chip TC = 25(125)o C under following conditions: VCC = 600V, IC = 150A RGon = RGoff =5.6 , Tj = 125o C VGE = ± 15V 5.5 6.5 0.1 0.3 1.4(1.6) 1.6(1.8) 7.33(10) 9.3(12.6) 2.5(3.1) 3(3.7) 10 13 1.5 2 0.8 1.2 20 0.35(0.5) 220 100 600 70 24(17) 2(1.8) 5 55(80) 8(20) 400 200 800 100 2.5 1.2 7 1.85(1.6) 3 60(90) 8(23) 2.2 1.2 5.5 0.09 0.25 0.18 0.038 3 2.5 5 5...