Datasheet4U Logo Datasheet4U.com

SID200N12 - NPT IGBT

📥 Download Datasheet

Datasheet Details

Part number SID200N12
Manufacturer Sirectifier Semiconductors
File Size 487.22 KB
Description NPT IGBT
Datasheet download datasheet SID200N12 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SID2010 3 Round Infrared LED Allegro MicroSystems
SID2K10C Through-hole Infrared LED Sanken
SID04N60-C N-Channel MOSFET SeCoS
SID04N65SL N-Ch Enhancement Mode Power MOSFET SeCoS
SID05N10 N-Channel Enhancement Mode Power MOSFET SeCoS

Other Datasheets by Sirectifier Semiconductors

Part Number Description
SID200S12 SPT IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SID200N12 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") www.DataSheet4U.com Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions TC = 25oC, unless otherwise specified Values 1200 Units V A A V o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < o 200(180) 400(360) _ +20 _ 40...+150(125) 2500 200(130) 400(360) 1450 260(180) 400(360) 1800 C AC, 1min Visol Inverse Diode IF = -IC IFRM V A A A A A A TC= 25(80)oC TC= 25(80)oC, tP =1ms IFSM tP =10ms; sin.;Tj=150oC Freewheeling diode TC= 25(80)oC IF = -IC IFRM TC= 25(80)oC, tP =1ms IFSM tP =10ms; sin.;Tj=150oC SID200N12 NPT IGBT Modules Characteristics Symbol IGBT VGE(th) ICES VCE(TO) rCE www.DataSheet4U.