SII100N12 Description
SII100N12 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") .. Tj = 25(125)oC IGES VGE = 20V, VCE = 0 VCE(sat) IC =100A; chip level AC Characteristics Cies under following conditions Coes VGE = 0, VCE = 25V, f = 1MHz Cres.
SII100N12 is NPT IGBT Modules manufactured by Sirectifier Semiconductors.
| Part Number | Description |
|---|---|
| SII100N06 | NPT IGBT |
| SII100S12 | SPT IGBT Modules |
| SII145S12 | SPT IGBT Modules |
| SII150N06 | NPT IGBT Modules |
| SII150N12 | NPT IGBT Modules |
SII100N12 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") .. Tj = 25(125)oC IGES VGE = 20V, VCE = 0 VCE(sat) IC =100A; chip level AC Characteristics Cies under following conditions Coes VGE = 0, VCE = 25V, f = 1MHz Cres.