STD70GK16 Datasheet | Sirectifier Semiconductors

.. STD/SDT70 Thyristor-Diode Modules, Diode-Thyristor Modules Type VRSM VDSM V 900 1300 1500 1700 1900 2100 2300 2500 VRRM VDRM V 800 1200 1400 1600 1800 2000 2200 2400 Dimensions in mm (1mm=0.0394") STD/SDT70GK08 STD/SDT70GK12 STD/SDT70GK14 STD/SDT70GK16 STD/SDT70GK18 STD/SDT70GK20 STD/SDT70GK22 STD/SDT70GK24 Symbol ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85o C; 180o sine TVJ=45o C VR=0 TVJ=TVJM VR=0 TVJ=45o C VR=0 TVJ=TVJM VR=0 TVJ=TVJM f=50Hz, tp=200us VD=2/3VDRM IG=0.45A di G/dt=0.45A/us Test Conditions Maximum Ratings 180 70 Unit A ITSM, IFSM t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine repetitive, IT=250A 1600 1700 1450 1550 13500 12600 10600 10250 150 A i dt A2s (di/dt)cr A/us non repetitive, IT=ITAVM 500 1000 10 5 0.5 10 -40...+125 125 -40...+125 V/us W W V o (dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight TVJ=TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) TVJ=TVJM IT=ITAVM tp=30us tp=300us 50/60Hz, RMS _ IISOL<1m A t=1min t=1s 3000 3600 2.5-4.0/22-35 2.5-4.0/22-35 90 V~ Nm/lb.in. g Mounting torque (M5) Terminal connection torque (M5) Typical including screws .. STD/SDT70 Thyristor-Diode Modules, Diode-Thyristor Modules Test Conditions Characteristic Values 5 1.65 0.85 3.2 Unit m A V V m V m A V m A m A m A us us u C A K/W K/W mm mm m/s2 Symbol IRRM, IDRM TVJ=TVJM; VR=VRRM; VD=VDRM VT, VF VTO r T VGT IGT VGD IGD IL IH tgd tq QS IRM Rth JC Rth JK d S d A a per thyristor/diode; DC current per module per thyristor/diode; DC current per module Creeping distance on surface Strike distance through air Maximum allowable acceleration TVJ=25 C; tp=10us; VD=6V IG=0.45A; di G/dt=0.45A/us TVJ=25o C; VD=6V; RGK= TVJ=25 C; VD=1/2VDRM IG=0.45A; di G/dt=0.45A/us TVJ=TVJM; IT=150A; tp=200us; -di/dt=10A/us VR=100V; dv/dt=20V/us; VD=2/3VDRM TVJ=TVJM; IT, IF=50A; -di/dt=6A/us typ. o o IT, IF=320A; TVJ=25 C...