Sirectifier Semiconductors STPR1020CT
Ultra Fast Recovery Diodes
MAXIMUM RATINGS
10 50 55 0.975 0.925 1.25 1.20 5 100 80 30 4.0 -55 to +150 Unit A A VF V IR CJ TRR ROJC uA pF ns o Typical Junction Capacitance Per Element (Note 1) Maximum Reverse Recovery Time (Note 2) Typical Thermal Resistance C/W o TJ, TSTG Operating And Storage Temperature Range NOTES: 1. Measured at 1.0MHz And Applied Reverse Voltage Of 4.0V DC. 2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A. CFEATURES
* Glass passivated chip * Superfast switching time for high efficiency * Low forward voltage drop and high current capability * Low reverse leakage current * High surge capacityMECHANICAL DATA
* Case: TO-220AB molded plastic * Polarity: As marked on the body * Weight: 0.08 ounces, 2.24 grams * Mounting position: Any STPR1010CT thru STPR1020CT Ultra Fast Recovery Diodes 12 10 8 6 4 2 0 SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD PEAK FORWARD SURGE CURRENT, AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT AMPERES FIG.2 - MAXIMUM...