STPR1640CT Datasheet | Sirectifier Semiconductors

Ultra Fast Recovery Diodes Dimensions TO-220AB A C(TAB) A C A Dim. A B C D E F G H J K M N Q R A=Anode, C=Cathode, TAB=Cathode VRRM V 400 VRMS V 280 VDC V 400 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Symbol I(AV) IFSM Characteristics Maximum Average Forward Rectified Current Non Repetitive Peak Forward Surge Current Per Diode Sinusoidal (JEDEC METHOD) Maximum Forward Voltage Pulse Width=300us Duty Cycle Maximum DC Reverse Current At Rated DC Blocking Voltage @TC=120o C TP=10ms TP=8.3ms Maximum Ratings 16 80 90 Unit A A IF=16A @TJ=25o C IR CJ TRR ROJC @TJ=100o C 5 500 80 35 3.0 -55 to +150 o u A p F ns C/W o Typical Junction Capacitance Per Element (Note 1) Maximum Reverse Recovery Time (Note 2) Typical Thermal Resistance TJ, TSTG Operating and Storage Temperature Range NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. 2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A. Features - Glass passivated chip - Superfast switching time for high efficiency - Low forward voltage drop and high current capability - Low reverse leakage current - High surge capacity MECHANICAL DATA - Case: TO-220AB molded plastic - Polarity: As marked on the body - Weight: 0.08 ounces, 2.24...