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STPR806D Datasheet Ultra Fast Recovery Diodes

Manufacturer: Sirectifier Semiconductors

Overview: .. STPR806D Ultra Fast Recovery Diodes Dimensions TO-220AC A C(TAB) A C C Dim. A B C D E F G H J K L M N Q A=Anode, C=Cathode, TAB=Cathode STPR806D VRRM V 600 VRMS V 420 VDC V 600 Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Symbol I(AV) IFSM VF(MAX) IR CJ TRR ROJC Characteristics Maximum Average Forward Rectified Current @TC=100oC Maximum Ratings 8.0 100 1.75 1.4 5 200 60 25 2.5 -55 to +150 Unit A A V uA pF ns o Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Maximum Forward Voltage At 8.0A DC Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance (Note 1) Maximum Reverse Recovery Time (Note 2) Typical Thermal Resistance (Note 3) @TJ=25oC @TJ=125oC @TJ=25oC @TJ=125oC C/W o TJ, TSTG Operating And Storage Temperature Range NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. 2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A. 3. Thermal Resistance Junction To Case.

Key Features

  • Power factor correction function.
  • Glass passivated chip.
  • Superfast switching time for high efficiency.
  • Low forward voltage drop and high current capability.
  • Low reverse leakage current.
  • High surge capacity.

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