Sirectifier Semiconductors STPR820DB
Ultra Fast Recovery Diodes
MAXIMUM RATINGS
8.0 100 1.3 0.8 10 500 45 25 3.0 -55 to +150 Unit A A V uA pF ns o Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Maximum Forward Voltage IF=8A Maximum DC Reverse Current At Peak Reverse Voltage Typical Junction Capacitance (Note 1) Maximum Reverse Recovery Time (Note 2) Typical Thermal Resistance (Note 3) @TJ=25oC @TJ=150oC @TJ=25oC @TJ=100oC C/W o TJ, TSTG Operating And Storage Temperature Range NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. 2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A. 3. Thermal Resistance Junction To Case. CFEATURES
* Glass passivated chip * Superfast switching time for high efficiency * Low forward voltage drop and high current capability * Low reverse leakage current * High surge capacityMECHANICAL DATA
* Case: TO-220AC molded plastic * Polarity: As marked on the body * Weight: 0.08 ounces, 2.24 grams * Mounting position: Any STPR805DB thru STPR820DB Ult...