Datasheet4U Logo Datasheet4U.com

STT100 - Thyristor-Thyristor Modules

Key Features

  • International standard package.
  • Copper base plate.
  • Planar passivated chips.
  • Isolation voltage 3600 V~.

📥 Download Datasheet

Datasheet Details

Part number STT100
Manufacturer Sirectifier Semiconductors
File Size 939.50 KB
Description Thyristor-Thyristor Modules
Datasheet download datasheet STT100 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STT100 N-Channel MOSFET SamHop Microelectronics
STT10L01 N-Channel MOSFET SamHop Microelectronics
STT13005 High voltage fast-switching NPN power transistor ST Microelectronics
STT13005D High voltage fast-switching NPN power transistor ST Microelectronics
STT13005FP High voltage fast-switching NPN power transistor ST Microelectronics

Other Datasheets by Sirectifier Semiconductors

Part Number Description
STT116 Thyristor-Thyristor Modules
STT130 Thyristor-Thyristor Modules
STT18 Thyristor-Thyristor Modules
STT200 Thyristor
STT253 Thyristor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com STT100 Thyristor-Thyristor Modules Type VRSM VDSM V 900 1300 1500 1700 1900 2100 2300 VRRM VDRM V 800 1200 1400 1600 1800 2000 2200 Dimensions in mm (1mm=0.0394") STT100GK08 STT100GK12 STT100GK14 STT100GK16 STT100GK18 STT100GK20 STT100GK22 Symbol ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine TVJ=45oC VR=0 TVJ=TVJM VR=0 TVJ=45oC VR=0 TVJ=TVJM VR=0 TVJ=TVJM f=50Hz, tp=200us VD=2/3VDRM IG=0.45A diG/dt=0.45A/us Test Conditions Maximum Ratings 180 100 Unit A ITSM, IFSM t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.