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MBR30100PT - Schottky Barrier Rectifier

Key Features

  • Metal of silicon rectifier, majority carrier conducton.
  • Guard ring for transient protection.
  • Low power loss, high efficiency.
  • High current capability, low VF.
  • High surge capacity.
  • For use in low voltage, high frequency inverters, free whelling, and polarity protection.

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Datasheet Details

Part number MBR30100PT
Manufacturer Sirectifier
File Size 163.61 KB
Description Schottky Barrier Rectifier
Datasheet download datasheet MBR30100PT Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MBR30100PT thru MBR30200PT High Tjm Low IRRM Schottky Barrier Diodes AC A C(TAB) A C A A=Anode, C=Cathode, TAB=Cathode VRRM VRMS VDC V V V MBR30100PT 100 70 100 MBR30150PT 150 105 150 MBR30200PT 200 140 200 Dimensions TO-247AD Dim. Millimeter Min. Max. A 19.81 20.32 B 20.80 21.46 C 15.75 16.26 D 3.55 3.65 E 4.32 5.49 F 5.4 6.2 G 1.65 2.13 H - 4.5 J 1.0 1.4 K 10.8 11.0 L 4.7 5.3 M 0.4 0.8 N 1.5 2.49 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 - 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 Symbol Characteristics I(AV) Maximum Average Forward Rectified Current @TC=125oC IFSM Peak Forward Surge Current 8.