MBR30100PT Datasheet Schottky Barrier Rectifier

Manufacturer: Sirectifier

Overview: MBR30100PT thru MBR30200PT High Tjm Low IRRM Schottky Barrier Diodes AC A C(TAB) A C A A=Anode, C=Cathode, TAB=Cathode VRRM VRMS VDC V V V MBR30100PT 100 70 100 MBR30150PT 150 105 150 MBR30200PT 200 140 200 Dimensions TO-247AD Dim. Millimeter Min. Max. A 19.81 20.32 B 20.80 21.46 C 15.75 16.26 D 3.55 3.65 E 4.32 5.49 F 5.4 6.2 G 1.65 2.13 H - 4.5 J 1.0 1.4 K 10.8 11.0 L 4.7 5.3 M 0.4 0.8 N 1.5 2.49 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 - 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 Symbol Characteristics I(AV) Maximum Average Forward Rectified Current @TC=125oC IFSM Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) dv/dt Voltage Rate Of Change (Rated VR) VF Maximum Forward Voltage (Note 1) IF=15A IF=15A IF=30A IF=30A @TJ=25 oC @TJ=125 oC @TJ=25 oC @TJ=125 oC Maximum Ratings 30 250 10000 0.85 0.70 0.98 0.85 IR Maximum DC Reverse Current At Rated DC Blocking Voltage @TJ=25oC @TJ=125oC ROJC CJ TJ TSTG Typical Thermal Resistance (Note 2) Typical Junction Capacitance Per Element (Note 3) Operating Temperature Range Storage Temperature Range NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. 0.05 10 2.

Datasheet Details

Part number	MBR30100PT
Manufacturer	Sirectifier
File Size	163.61 KB
Description	Schottky Barrier Rectifier
Datasheet	MBR30100PT-Sirectifier.pdf

Key Features

Metal of silicon rectifier, majority carrier conducton.
Guard ring for transient protection.
Low power loss, high efficiency.
High current capability, low VF.
High surge capacity.
For use in low voltage, high frequency inverters, free whelling, and polarity protection.

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