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MBR40100PT Datasheet Schottky Barrier Diodes

Manufacturer: Sirectifier

Overview: MBR40100PT High Tjm (+175oC) Schottky Barrier Diodes AC A C(TAB) A C A A=Anode, C=Cathode, TAB=Cathode MBR40100PT VRRM V 100 VDC V 100 Dimensions TO-247AD Dim. Millimeter Min. Max. A 19.81 20.32 B 20.80 21.46 C 15.75 16.26 D 3.55 3.65 E 4.32 5.49 F 5.4 6.2 G 1.65 2.13 H - 4.5 J 1.0 1.4 K 10.8 11.0 L 4.7 5.3 M 0.4 0.8 N 1.5 2.49 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 - 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 Symbol Characteristics IF(AV) Maximum Average Forward Rectified Current @TC=145oC IFSM Peak Forward Surge Current 10ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) dv/dt Voltage Rate Of Change (Rated VR) VFM Maximum Forward Voltage (Note 1) IF=20A IF=20A IF=40A IF=40A @TJ=25 oC @TJ=125oC @TJ=25 oC @TJ=125oC Maximum Ratings 40 300 10000 0.77 0.61 0.91 0.75 IRM Maximum DC Reverse Current At Rated DC Blocking Voltage @TJ=25oC @TJ=125oC RthJC CT TJ TSTG Typical Thermal Resistance (Note 2) Typical Junction Capacitance Per Element (Note 3) Operating Temperature Range Storage Temperature Range NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. 1.25 15 1.

Datasheet Details

Part number MBR40100PT
Manufacturer Sirectifier
File Size 216.11 KB
Description Schottky Barrier Diodes
Datasheet MBR40100PT-Sirectifier.pdf

Key Features

  • Metal of silicon rectifier, majority carrier conducton.
  • Guard ring for transient protection.
  • Low power loss, high efficiency.
  • High current capability, low VF.
  • High surge capacity.
  • For use in low voltage, high frequency inverters, free whelling, and polarity protection.

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