Sirectifier MBR40100PT
Schottky Barrier Diodes
MAXIMUM RATINGS
40 300 10000 0.77 0.61 0.91 0.75 IRM Maximum DC Reverse Current At Rated DC Blocking Voltage @TJ=25oC @TJ=125oC RthJC CT TJ TSTG Typical Thermal Resistance (Note 2) Typical Junction Capacitance Per Element (Note 3) Operating Temperature Range Storage Temperature Range NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. 1.25 15 1.25 600 -55 to +175 -55 to +175FEATURES
* Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applicationsMECHANICAL DATA
* Case: TO-247AD molded plastic * Polarity: As marked on the body * Weight: 0.2 ounces, 5.6 grams * Mounting position: Any Unit A A V/us V mA oC/W pF oC oC I ns t ant aneous For arw durC r Fetn - I ( )A MBR40100PT...