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MBR5150 - Schottky Barrier Diodes

Key Features

  • Metal of silicon rectifier, majority carrier conducton.
  • Guard ring for transient protection.
  • Low power loss, high efficiency.
  • High current capability, low VF.
  • High surge capacity.
  • For use in low voltage, high frequency inverters, free whelling, and polarity protection.

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Datasheet Details

Part number MBR5150
Manufacturer Sirectifier
File Size 169.08 KB
Description Schottky Barrier Diodes
Datasheet download datasheet MBR5150 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MBR5150 thru MBR5200 High Tjm Low IRRM Schottky Barrier Diodes A C C(TAB) AA CC A=Anode, C=Cathode, TAB=Cathode MBR5150 MBR5200 VRRM VRMS VDC V V V 150 105 150 200 140 200 Dimensions TO-220AC Symbol Characteristics I(AV) Maximum Average Forward Rectified Current @TC=120oC IFSM Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) dv/dt Voltage Rate Of Change (Rated VR) VF Maximum Forward Voltage (Note 1) IF=5A @TJ=25 Co IF=5A @TJ=125 Co IF=10A @TJ=25 oC IF=10A @TJ=125oC IR Maximum DC Reverse Current At Rated DC Blocking Voltage @TJ=25oC @TJ=125oC ROJC Typical Thermal Resistance (Note 2) TJ TSTG Operating Temperature Range Storage Temperature Range NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2.