MUR8100 Datasheet PDF

MAXIMUM RATINGS

25 12 150 75 80 65 70 28 27 21 20 -40...+150 150 -40...+150 Unit A IFSM TVJ=150oC TVJ=45oC A I2t TVJ=150oC A2s TVJ TVJM Tstg Ptot Md Weight TC=25oC mounting torque o C 78 0.4...0.6 2 W Nm g MUR8100 Ultra Fast Recovery Diodes Symbol Test Conditions TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM IF=12A; TVJ=150oC TVJ=25oC For power-loss calculations only TVJ=TVJM Characteristic Values typ. max. 250 150 4 2.1 2.7 1.67 33.6 1.6 0.5 60 Unit uA uA mA V V m K/W IR VF VTO rT RthJC RthCK RthJA trr IRM IF=1A; -di/dt=50A/us; VR=30V; TVJ=25oC _ VR=540V; IF=12A; -diF/dt=100A/us; L<0.05uH; TVJ=100 C o 50 6.5 60 7.2 ns A

FEATURES

* International standard package JEDEC TO-220AC * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour

APPLICATIONS

* Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circ...