Overview: MUR860S
Ultra Fast Recovery Diodes C(TAB) A
A NC Dimensions TO-263(D2PAK) C A=Anode, NC= No connection, TAB=Cathode MUR860S VRSM V
600 VRRM V
600 1. Gate 2. Collector 3. Emitter 4. Collector
Botton Side Dim.
A A1
b b2
c c2
D D1
E E1 e
L L1 L2 L3 L4
R Millimeter Min. Max. 4.06 4.83 2.03 2.79 0.51 0.99 1.14 1.40 0.46 0.74 1.14 1.40 8.64 9.65 8.00 8.89 9.65 10.29 6.22 8.13 2.54 BSC 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.20 0.46 0.74 Inches Min. Max.
.160 .190 .080 .110
.020 .039 .045 .055
.018 .029 .045 .055
.340 .380 .315 .350
.380 .405 .245 .320 .100 BSC
.575 .625 .090 .110 .040 .055 .050 .070
0 .008
.018 .029 Symbol Test Conditions IFRMS IFAVM IFRM
IFSM
I2t TVJ=TVJM TC=115oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM TVJ=45oC TVJ=150oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine TVJ=45oC TVJ=150oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine TVJ TVJM Tstg
Ptot TC=25oC Md mounting torque Weight Maximum Ratings Unit 16 8 A 130 100 110 85 A 95 50 50 36 A2s 37 -40...+150 150 oC -40...+150 50 W 0.4...0.6 Nm 2 g P1 ©2008 SIRECTIFIER Electronics Technology Corp. all rights reserved www.sirectifier.com MUR860S
Ultra Fast Recovery Diodes Symbol Test Conditions IR
VF
VTO rT RthJC RthCK RthJA trr IRM TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM IF=8A; TVJ=150oC
TVJ=25oC For power-loss calculations only TVJ=TVJM
IF=1A; -di/dt=50A/us; VR=30V; TVJ=25oC VR=350V; IF=8A; -diF/dt=64A/us; L<_0.05uH; TVJ=100oC Characteristic Values Unit typ. max. 20 uA 10 uA 1.5 mA 1.3 1.5 V 0.98 V 28.7 m 2.5 0.5 K/W 60 35 50 ns 2.5 2.
