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MUR860S - Ultra Fast Recovery Diodes

Key Features

  • International standard package JEDEC TO-263.
  • Glass passivated chips.
  • Very short recovery time.
  • Extremely low switching losses.
  • Low IRM-values.
  • Soft recovery behaviour.
  • RoHS compliant.

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Datasheet Details

Part number MUR860S
Manufacturer Sirectifier
File Size 212.00 KB
Description Ultra Fast Recovery Diodes
Datasheet download datasheet MUR860S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MUR860S Ultra Fast Recovery Diodes C(TAB) A A NC Dimensions TO-263(D2PAK) C A=Anode, NC= No connection, TAB=Cathode MUR860S VRSM V 600 VRRM V 600 1. Gate 2. Collector 3. Emitter 4. Collector Botton Side Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R Millimeter Min. Max. 4.06 4.83 2.03 2.79 0.51 0.99 1.14 1.40 0.46 0.74 1.14 1.40 8.64 9.65 8.00 8.89 9.65 10.29 6.22 8.13 2.54 BSC 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.20 0.46 0.74 Inches Min. Max. .160 .190 .080 .110 .020 .039 .045 .055 .018 .029 .045 .055 .340 .380 .315 .350 .380 .405 .245 .320 .100 BSC .575 .625 .090 .110 .040 .055 .050 .070 0 .008 .018 .029 Symbol Test Conditions IFRMS IFAVM IFRM IFSM I2t TVJ=TVJM TC=115oC; rectangular, d=0.5 tp<10us; rep.