Sirectifier SD4503
Discrete Diodes
MAXIMUM RATINGS
45 475 520 380 420 1120 1120 720 720 -40...+150 150 -40...+150 0.8...1.2 2500 6 Characteristic Values <_ 3 <_ 1.18 0.8 8 0.55 0.2 Unit A A A2s oC Nm V~ g Unit mA V V m K/W SD45 Discrete Diodes 70 A 60 IF 50 40 T VJ=150°C TVJ= 25°C 500 50Hz, 80% VRRM A IF S 4 M 00 TVJ = 45°C 300 30 200 20 TVJ = 150°C 100 10 0 0.0 0.4 0.8 1.2 V 1.6 VF F ig. 1 F orward current vers us voltage drop per diode 100 W 80 P tot 60 0 0.001 0.01 0.1 s t F ig. 2 S urge overload current 1 R thHA : 0.5 K /W 1.0 K /W 1.5K /W 2.0 K /W 3.0 K /W 4.0 K /W 6.0 K /W 40 104 A2s V R = 0 V I2t TVJ = 45°C 103 TVJ = 150°C 102 1 2 3 4 15 6 7 8ms9 0 t F ig. 3 I2t vers us time per diode 50 A 40 IF(AV)M 30 20 20 10 0 0 10 20 30 40 A 0 20 40 60 80 100 120 140 °C I d(AV )M T amb F ig. 4 P ower dissipation versus direct output current and ambient temperature, sine 180° 0.6 0 0 20 40 60 80 100 120 140 °C TC F ig. 5 Max. forward current vers us cas e temperature K /W Z thJ C 0.4 0.2 0.0 0.001 0.01 0.1 F ig. 6 T rans ient thermal impedance junction to cas e C ons tants for ZthJC calculation: i 1 2 3 DSI45 4 1 s 10 t R thi (K /W ) 0.1633 0.2517 0.0933 0.04167 ti (s ) 0.