Datasheet4U Logo Datasheet4U.com

STD253 - Thyristor-Diode Modules

Key Features

  • International standard package.
  • Copper base plate.
  • Planar passivated chips.
  • Isolation voltage 3600 V~.

📥 Download Datasheet

Datasheet Details

Part number STD253
Manufacturer Sirectifier
File Size 283.14 KB
Description Thyristor-Diode Modules
Datasheet download datasheet STD253 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STD2555NL N-Channel Enhancement Mode Field Effect Transistor SamHop Microelectronics
STD2596 3A PWM Buck DC/DC Converter Semtron
STD25N03L N-Channel Enhancement Mode Field Effect Transistor SamHop Microelectronics
STD25N10F7 N-CHANNEL POWER MOSFET STMicroelectronics
STD25N10F7 N-Channel MOSFET INCHANGE

Other Datasheets by Sirectifier

Part Number Description
STD200 Thyristor-Diode Modules
STD27 Thyristor-Diode Modules

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STD/SDT253 Thyristor-Diode Modules, Diode-Thyristor Modules Dimensions in mm (1mm=0.0394") Type VRSM VDSM V STD/SDT253GK08 900 STD/SDT253GK12 1300 STD/SDT253GK14 1500 STD/SDT253GK16 1700 STD/SDT253GK18 1900 VRRM VDRM V 800 1200 1400 1600 1800 Symbol ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine TVJ=45oC VR=0 TVJ=TVJM VR=0 TVJ=45oC VR=0 TVJ=TVJM VR=0 TVJ=TVJM f=50Hz, tp=200us VD=2/3VDRM IG=1A diG/dt=1A/us Test Conditions Maximum Ratings 400 253 Unit A ITSM, IFSM t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine repetitive, IT=750A 8500 9000 7000 8000 405000 336000 320000 240000 250 A i dt 2 A2s (di/dt)cr A/us non repetitive, IT=250A 800 1000 120 60 20 10 -40...