Datasheet4U Logo Datasheet4U.com

STT60GK12B - Thyristor-Thyristor Modules

Download the STT60GK12B datasheet PDF. This datasheet also covers the STT60GK08B variant, as both devices belong to the same thyristor-thyristor modules family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • International standard package.
  • Copper base plate.
  • Glass passivated chips.
  • Isolation voltage 3600 V~.
  • UL file NO.310749.
  • RoHs compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STT60GK08B-Sirectifier.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number STT60GK12B
Manufacturer Sirectifier
File Size 812.81 KB
Description Thyristor-Thyristor Modules
Datasheet download datasheet STT60GK12B Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STT600 N-Channel MOSFET SamHop Microelectronics
STT622S N-Channel MOSFET SamHop Microelectronics
STT626 N-Channel MOSFET SamHop Microelectronics
STT6405 P-Channel MOSFET VBsemi
STT6405 P-Channel MOSFET SeCoS

Other Datasheets by Sirectifier

Part Number Description
STT60GK12 Thyristor-Thyristor Modules
STT60GK14 Thyristor-Thyristor Modules
STT60GK14B Thyristor-Thyristor Modules
STT60GK16 Thyristor-Thyristor Modules
STT60GK16B Thyristor-Thyristor Modules

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STT60GKxxB Thyristor-Thyristor Modules Type VRSM VDSM V 900 1300 1500 1700 1900 VRRM VDRM V 800 1200 1400 1600 1800 Tolerance:+0.5mm Dimensions in mm (1mm=0.0394") STT60GK08B STT60GK12B STT60GK14B STT60GK16B STT60GK18B Symbol ITRMS, IFRMS T VJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine ITSM, IFSM o T VJ=45 C VR=0 T VJ=TVJM VR=0 o T VJ=45 C VR=0 T VJ=TVJM VR=0 Test Conditions Maximum Ratings 94 60 Unit A t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine repetitive, IT=150A non repetitive, IT=ITAVM 1500 1600 1350 1450 11200 10750 9100 8830 150 500 1000 10 5 0.5 10 -40...+125 125 -40...+125 A i dt 2 A2s (di/dt)cr T VJ=TVJM f=50Hz, tp=200us VD=2/3VDRM IG=0.45A diG/dt=0.