SUR12060
SUR12060 is Ultra Fast Recovery Epitaxial Diodes manufactured by Sirectifier.
..
Ultra Fast Recovery Epitaxial Diodes
Dimensions TO-247AC A C(TAB) C A C
Dim. A B C D E F G H J K L M N
Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49
Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102
A=Anode, C=Cathode, TAB=Cathode VRSM V 600 VRRM V 600
Symbol IFRMS IFAVM IFRM
Test Conditions TVJ=TVJM TC=70o C; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM TVJ=45o C t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine
Maximum Ratings 100 120 tbd 600 660 540 600 1800 1800 1450 1500 -40...+150 150 -40...+150
Unit A
IFSM
TVJ=150o C TVJ=45o C
I2t
TVJ=150o C
As
TVJ TVJM Tstg Ptot Md Weight TC=25o C Mounting torque o
357 0 1.2 6
W Nm g
Ultra Fast Recovery Epitaxial Diodes
Symbol
Test Conditions TVJ=25o C; VR=VRRM TVJ=25o C; VR=0.8.VRRM TVJ=125o C; VR=0.8.VRRM IF=70A; TVJ=150o C TVJ=25o C For power-loss calculations only TVJ=TVJM
Characteristic Values typ. max. 3 0.75 20 1.12 1.3 0.85 3.5 0.35 0.25 35
Unit
IR m A V V m K/W
VF VTO r T Rth JC Rth CK Rth JA trr IRM
IF=1A; -di/dt=200A/us; VR=30V; TVJ=25o C _ VR=350V; IF=80A; -di F/dt=200A/us; L<0.05u H; TVJ=100 C o
35 17
50 21 ns...