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SBA-4089Z - Cascadable InGaP/GaAs HBT MMIC Amplifier

Download the SBA-4089Z datasheet PDF. This datasheet also covers the SBA-4089 variant, as both devices belong to the same cascadable ingap/gaas hbt mmic amplifier family and are provided as variant models within a single manufacturer datasheet.

General Description

Sirenza Microdevices’ SBA-4089 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier.

A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with excellent thermal perfomance.

Key Features

  • Now available in Lead Free, RoHS Compliant, & Green Packaging.
  • IP3 = 33.5dBm @ 1950MHz.
  • Pout=13.3 dBm @-45dBc ACP IS-95 1950MHz.
  • Robust 1000V ESD, Class 1C.
  • Operates From Single Supply.
  • Patented Thermal Design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SBA-4089-SirenzaMicrodevices.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SBA-4089Z
Manufacturer Sirenza Microdevices
File Size 310.11 KB
Description Cascadable InGaP/GaAs HBT MMIC Amplifier
Datasheet download datasheet SBA-4089Z Datasheet

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Other Datasheets by Sirenza Microdevices

Part Number Description
SBA-4089 Cascadable InGaP/GaAs HBT MMIC Amplifier
SBA-4086 Cascadable InGaP/GaAs HBT MMIC Amplifier
SBA-4086Z Cascadable InGaP/GaAs HBT MMIC Amplifier
SBA-5089 Cascadable InGaP/GaAs HBT MMIC Amplifier
SBA-5089Z Cascadable InGaP/GaAs HBT MMIC Amplifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SBA-4089 Product Description Sirenza Microdevices’ SBA-4089 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only a single positive supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.