SBF-4089 Datasheet | Sirenza Microdevices

Product Description Sirenza Microdevices’ SBF-4089 is a high performance In Ga P/ Ga As Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with In Ga P process technology provides broadband performance up to 0.5 GHz with excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction nonlinearities results in higher suppression of intermodulation products. Only a single positive supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is Ro HS pliant per EU Directive 2002/95. This package is also manufactured with green molding pounds that contain no antimony trioxide nor halogenated fire retardants. S -P aram e te rs v s F re q u e n c y +2 5 c 16 15.5 15 14.5 Gain(d B) s 21 s 11 s 22 SBF-4089 SBF-4089Z Pb Ro HS pliant & Green Package DC-500 MHz, Cascadable In Ga P/Ga As HBT MMIC Amplifier Product Features - Available in Lead Free, Ro HS pliant, & Green packaging - IP3 = 42d Bm @ 240MHz - Stable Gain Over Temperature - Robust 1000V ESD, Class 1C - Operates From Single Supply - Low Thermal Resistance -5 -10 -15 -20 -25 IRL,ORL(d B) 14 13.5 13 12.5 12 11.5 11 0 100 200 300 400 500 600 700 800 900 Fre q Applications - Receiver IF Amplifier - Cellular, PCS, GSM, UMTS - PA Driver Amp - Wireless Data, Satellite Terminals U nits d B Frequency 70MHz 240 MHz 500 MHz 70MHz 240 MHz 400 MHz 70MHz 240 MHz 400 MHz 500 MHz 500 MHz 500 MHz 4.5 82 Min. 13.3 13.2 Typ. 14.9 14.8 14.7 20.1 20.1 19.9 40.0 42.0 41.0 17.0 16.0 3.3 4.9 90 43 4.3 5.3 98 Max. 16.3 16.2 Symbol G Parameter Small Si gnal Gai n P 1d B Output Power at 1d B C ompressi on d B...