SGA-2363 Datasheet | Sirenza Microdevices

Description The SGA-2363 is a high performance Si Ge HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. SGA-2363Z Pb Ro HS pliant & Green Package DC-5000 MHz, Cascadable Si Ge HBT MMIC Amplifier The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is Ro HS Product Features pliant per EU Directive 2002/95. This package is also manufactured with green molding pounds that contain no antimony - Now available in Lead Free, Ro HS pliant, & Green Packaging trioxide nor halogenated fire retardants. Gain & Return Loss vs. Freq. @TL=+25°C 24 GAIN 0 - High Gain : 16.1 d B at 1950 MHz - Cascadable 50 Ohm - Operates From Single Supply - Low Thermal Resistance Package 12 6 IRL ORL Return Loss (d B) 18 Gain (d B) -10 -20 -30 Applications - - - - PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite 0 0 1 2 3 Frequency (GHz) 4 5 -40 Symbol G Parameter Small Signal Gain Units d B Frequency 850 MHz 1950 MHz 2400 MHz 850 MHz 1950 MHz 850 MHz 1950 MHz Min. 15.8 Typ. 17.5 16.1 15.6 8.2 7.2 19.4 19.0 5000 Max. 19.3 P1d B OIP3 Output Pow er at 1d B pression Output Third Order Intercept Point d Bm d Bm MHz d B d B d B V m A °C/W Bandw idth Determined by Return Loss (>10d B) IRL ORL NF VD ID RTH, j-l Input Return Loss Output Return Loss Noise Figure Device Voltage Device Operating Current Thermal Resistance (junction to lead) VS = 5 V RBIAS = 120 Ohms 1950 MHz 1950 MHz 1950 MHz 2.4 17 15.1 25.5 3.2 2.7 20 255 3.0 23 Test...