• Part: SGA-2386Z
  • Description: Cascadable SiGe HBT MMIC Amplifier
  • Manufacturer: Sirenza Microdevices
  • Size: 98.63 KB
Download SGA-2386Z Datasheet PDF
Sirenza Microdevices
SGA-2386Z
SGA-2386Z is Cascadable SiGe HBT MMIC Amplifier manufactured by Sirenza Microdevices.
- Part of the SGA-2386 comparator family.
Description The SGA-2386 is a high performance Si Ge HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is Ro HS pliant per EU Directive 2002/95. This package is also manufactured with green molding pounds that contain no antimony trioxide nor halogenated fire retardants. Gain & Return Loss vs. Freq. @TL=+25°C 24 GAIN Gain (d B) IRL 12 ORL 6 -30 -20 Return Loss (d B) 18 -10 0 SGA-2386 SGA-2386Z Pb Ro HS pliant & Green Package DC-5000 MHz, Cascadable Si Ge HBT MMIC Amplifier Product Features - Now available in Lead Free, Ro HS pliant, & Green Packaging - High Gain : 15.3d B at 1950 MHz - Cascadable 50 Ohm - Operates From Single Supply - Low Thermal Resistance Package Applications - - - - PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite 0 0 1 2 3 Frequency (GHz) 4 5 -40 Symbol G Parameter Small Signal Gain Units d B Frequency 850 MHz 1950 MHz 2400 MHz 850 MHz 1950 MHz 850 MHz 1950 MHz Min. 15.5 Typ. 17.2 15.3 14.5 8.5 7.5 20.5 19.5 2800 Max. 18.9 P1d B OIP3 Output Pow er at 1d B pression Output Third Order Intercept Point d Bm d Bm MHz d B d B d B V m A °C/W Bandw idth Determined by Return Loss (>8d B) IRL ORL NF VD ID RTH, j-l Input Return Loss Output Return Loss Noise Figure Device Voltage Device Operating Current Thermal Resistance (junction to lead) VS = 5 V RBIAS = 120 Ohms 1950 MHz 1950 MHz 1950 MHz 2.4 17 11.5 20.2 3.2 2.7 20 97 3.0 23 Test Conditions: ID = 20 m A Typ. TL = 25ºC OIP3 Tone Spacing = 1 MHz, Pout per tone = -5 d...