SGA-2463Z Datasheet | Sirenza Microdevices

Description The SGA-2463 is a high performance Si Ge HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. Pb Ro HS pliant & Green Package DC-5000 MHz, Cascadable Si Ge HBT MMIC Amplifier The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is Ro HS Product Features pliant per EU Directive 2002/95. This package is also manu- - Now available in Lead Free, Ro HS factured with green molding pounds that contain no antimony pliant, & Green Packaging trioxide nor halogenated fire retardants. Gain & Return Loss vs. Freq. @T L=+25°C 24 GAIN Return Loss (d B) 18 Gain (d B) IRL 12 ORL 6 -30 -20 -10 0 - High Gain : 17.1 d B at 1950 MHz - Cascadable 50 Ohm - Operates From Single Supply - Low Thermal Resistance Package Applications - - - - PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite 0 0 1 2 3 Frequency (GHz) 4 5 -40 Symbol G P1d B OIP3 Parameter Small Signal Gain Output Power at 1d B pression Output Third Order Intercept Point Units d B d Bm d Bm MHz d B d B d B V m A °C/W Frequency 850 MHz 1950 MHz 850 MHz 1950 MHz 850 MHz 1950 MHz Min. 18.0 Typ. 20.0 17.1 8.0 7.2 20.1 18.0 5000 Max. 22.0 Bandwidth Determined by Return Loss (>10d B) IRL ORL NF VD ID RTH, j-l Input Return Loss Output Return Loss Noise Figure Device Voltage Device Operating Current Thermal Resistance (junction to lead) VS = 5 V RBIAS = 120 Ohms 1950 MHz 1950 MHz 1950 MHz 2.4 17 11.1 23.1 3.0 2.7 20 255 3.0 23 Test Conditions: ID = 20 m A Typ. TL = 25ºC OIP3 Tone Spacing = 1 MHz, Pout per tone = -5 d Bm ZS = ZL = 50...