SGA-3286 Datasheet | Sirenza Microdevices

Description Sirenza Microdevices’ SGA-3286 is a high performance Si Ge HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high F T and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. At 850 Mhz and 35m A , the SGA3286 typically provides +25.5 d Bm output IP3, 14.5 d B of gain, and +12.2 d Bm of 1d B pressed power using a single positive voltage supply. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. Gain & Return Loss vs. Frequency VD= 2.6 V, ID= 35 m A (Typ.) DC-5000 MHz, Cascadable Si Ge HBT MMIC Amplifier Product Features • Broadband Operation: DC-5000 MHz • Cascadable 50 Ohm • Patented Si Ge Technology 20 15 Gain (d B) 10 ORL GAIN IRL 0 -10 -20 -30 -40 0 1 2 3 Frequency (GHz) 4 5 Return Loss (d B) • Operates From Single Supply • Low Thermal Resistance Package Applications • PA Driver Amplifier • Cellular, PCS, GSM, UMTS • IF Amplifier • Wireless Data, Satellite Units d B d Bm d Bm M Hz d B d B d B V m A °C/W 1950 M Hz 1950 M Hz 1950 M Hz 2.3 31 Frequency 850 M Hz 1950 M Hz 2400 M Hz 850 M Hz 1950 M Hz 850 M Hz 1950 M Hz Min. 13.0 Ty p. 14.5 13.0 12.2 12.2 11.3 25.5 24.8 5000 19.2 22.7 3.8 2.6 35 97 2.9 39 Max. 16.0 5 0 Sy mbol G P1d B OIP3 Parameter Small Signal Gain Output Pow er at 1d B pression Output Third Order Intercept Point Bandw idth Determined by Return Loss (>10d B) IRL ORL NF VD ID RTH, j-l Input Return Loss Output Return Loss Noise Figure Device Operating Voltage Device Operating Current Thermal Resistance (junction to lead) VS = 5 V RBIAS = 68 Ohms ID = 35 m A Typ. TL = 25ºC Test Conditions: OIP3 Tone Spacing = 1 MHz, Pout per tone = -5 d Bm ZS = ZL = 50 Ohms The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility...