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SHF-0289Z - GaAs HFET

Datasheet Summary

Description

Sirenza Microdevices’ SHF-0289 is a high performance AlGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package.

The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity.

Features

  • Directive 2002/95. This package is also manufactured with green molding.
  • Now available in Lead Free, RoHS compounds that contain no antimony trioxide nor halogenated fire retarCompliant, & Green Packaging dants. Typical Gain Performance (7V,200mA) 40 35 30 25 20 15 10 5 0 0 1 2 Gain, Gmax (dB) Gmax Gain.
  • High Linearity Performance at 1.96 GHz +30 dBm P1dB +43 dBm OIP3 +23.7 dBm IS-95 Channel Power +14.6 dB Gain.
  • +21.7 dBm W-CDMA Channel Power.
  • High Drain E.

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Datasheet Details

Part number SHF-0289Z
Manufacturer Sirenza Microdevices
File Size 94.65 KB
Description GaAs HFET
Datasheet download datasheet SHF-0289Z Datasheet
Additional preview pages of the SHF-0289Z datasheet.

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Full PDF Text Transcription

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Product Description Sirenza Microdevices’ SHF-0289 is a high performance AlGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity. Output power at 1dB compression for the SHF-0289 is +30dBm when biased for Class AB operation at 7V,200mA. The +43 dBm third order intercept makes it ideal for high dynamic range, high intercept point requirements. It is well suited for use in both analog and digital wireless communication infrastructure and subscriber equipment including 3G, cellular, PCS, fixed wireless, and pager systems. SHF-0289 SHF-0289Z Pb RoHS Compliant & Green Package 0.05 - 6 GHz, 1.
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