Datasheet Details
| Part number | SHF-0289Z |
|---|---|
| Manufacturer | Sirenza Microdevices |
| File Size | 94.65 KB |
| Description | GaAs HFET |
| Datasheet |
 SHF-0289Z Datasheet
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General Description
Sirenza Microdevices’ SHF-0289 is a high performance AlGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package.
The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity.
Key Features
- Directive 2002/95. This package is also manufactured with green molding.
- Now available in Lead Free, RoHS compounds that contain no antimony trioxide nor halogenated fire retarCompliant, & Green Packaging dants. Typical Gain Performance (7V,200mA) 40 35 30 25 20 15 10 5 0 0 1 2 Gain, Gmax (dB) Gmax Gain.
- High Linearity Performance at 1.96 GHz +30 dBm P1dB +43 dBm OIP3 +23.7 dBm IS-95 Channel Power +14.6 dB Gain.
- +21.7 dBm W-CDMA Channel Power.
- High Drain E.