SPA-1118Z Datasheet | Sirenza Microdevices

Description Sirenza Microdevices’ SPA-1118 is a high efficiency Ga As Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 850 MHz band. Its high linearity makes it an ideal choice for wireless data and digital applications. The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is Ro HS pliant per EU Directive 2002/95. This package is also manufactured with green molding pounds that contain no antimony trioxide nor halogenated fire retardants. Pb Ro HS pliant & Green Package 850 MHz 1 Watt Power Amplifier with Active Bias Product Features - Now available in Lead Free, Ro HS pliant, & Green Packaging - High Linearity Performance: +21 d Bm IS-95 Channel Power at -55 d Bc ACP +48 d Bm OIP3 Typ. - On-chip Active Bias Control - Patented High Reliability Ga As HBT Technology - Surface-Mountable Plastic Package VCC VBIAS RFIN .. N/C Active Bias N/C RFOUT/ VCC N/C N/C Input Match Applications - Multi-Carrier Applications - AMPS, ISM Applications S ym b o l f0 P 1d B ACP S 21 VSWR OIP 3 NF IC C V CC R th,j-l P a ra m e te rs: Tes t C o n d itio n s : Z 0 = 5 0 Oh m s , V C C = 5 V, Te m p = 2 5ºC F re que ncy o f Op e ra tion Output P o we r a t 1 d B C o m p re ssio n A d ja cent C ha nne l P o wer IS -9 5 @ 8 80 M Hz, ± 88 5 K Hz, P OUT = 2 1 d B m S m all S ig nal Ga in, 88 0 M Hz Inp ut V S W R Output Third Ord er Inte rce pt P o int P o we r o ut p er tone = +1 4 d B m No ise F igure D e vice C urre nt D e vice Vo lta g e Therm al Resistance (junctio n - lea d ) , TL =8 5ºC U n its M Hz d B m d B c d B d B m d B m A V ºC /W M in . 81 0 Typ . M ax . 960 29 .5 -5 7.0 1...