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SPA-1318 - Power Amplifier

General Description

Sirenza Microdevices’ SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package.

Key Features

  • High Linearity Performance: +20.1 dBm W-CDMA Channel Power at -50 dBc ACP +47 dBm Typ. OIP3 VCC VBIAS RFIN N/C www. DataSheet4U. com RFOUT/ VCC Input Match Reduction Symbol f0 P 1dB AC P S 21 VSWR OIP3 NF Icc Parameters: Test Conditions: Z0 = 50 Ohms, Temp = 25ºC, Vcc = 5.0V Frequency of Operation R EC O M M EN D ED FO R Units MHz dB m dB c dB dB m dB mA V ºC/W.
  • Patented High Reliability GaAsHBT Technology.
  • Surface-Mountable Plastic Package.

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Datasheet Details

Part number SPA-1318
Manufacturer Sirenza Microdevices
File Size 114.36 KB
Description Power Amplifier
Datasheet download datasheet SPA-1318 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product Description Sirenza Microdevices’ SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 2150 MHz PCS band. Its high linearity makes it an ideal choice for multi-carrier and digital applications. SPA-1318 2150 MHz 1 Watt Power Amplifier with Active Bias Product Features • High Linearity Performance: +20.1 dBm W-CDMA Channel Power at -50 dBc ACP +47 dBm Typ. OIP3 VCC VBIAS RFIN N/C www.DataSheet4U.