SPA-1318 Datasheet | Sirenza Microdevices

Description Sirenza Microdevices’ SPA-1318 is a high efficiency Ga As Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 2150 MHz PCS band. Its high linearity makes it an ideal choice for multi-carrier and digital applications. 2150 MHz 1 Watt Power Amplifier with Active Bias Product Features - High Linearity Performance: +20.1 d Bm W-CDMA Channel Power at -50 d Bc ACP +47 d Bm Typ. OIP3 VCC VBIAS RFIN N/C .. RFOUT/ VCC Input Match Reduction Symbol f0 P 1d B AC P S 21 VSWR OIP3 NF Icc Parameters: Test Conditions: Z0 = 50 Ohms, Temp = 25ºC, Vcc = 5.0V Frequency of Operation R EC O M M EN D ED FO R Units MHz d B m d B c d B d B m d B m A V ºC/W - Patented High Reliability Ga As HBT Technology - Surface-Mountable Plastic Package Applications - W-CDMA Systems - Multi-Carrier Applications Min. 2110 29.0 -50.0 11.5 12.5 1.5:1 47.0 7.0 275 4.75 310 5.0 35 330 5.25 -47.0 13.5 Typ. Max. 2170 Output Power at 1d B pression [1,2] Adjacent Channel Power [1] W-CDMA @ POUT = 20.1 d Bm Small Signal Gain [1,2] Input VSWR [1,2] Output Third Order Intercept Point Power out per tone = +14d Bm [1,2] [2] Noise Figure Device Current Device Voltage [1,2] V cc Rth,j-l [1,2] Thermal Resistance (junction - lead), TL=85ºC [1] Optimal ACP tune [2] Optimal IP3 tune The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or...