SPA-2318 Datasheet | Sirenza Microdevices

Description Sirenza Microdevices’ SPA-2318 is a high efficiency Ga As Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 1960 and 2140 MHz bands. Its high linearity makes it an ideal choice for multi-carrier and digital applications. SPA-2318Z & Green Package Preliminary Pb Ro HS pliant 1700-2200 MHz 1 Watt Power Amp with Active Bias Product Features The matte tin finish on Sirenza’s lead-free package utilizes a post - Now available in Lead Free, Ro HS annealing process to mitigate tin whisker formation and is Ro HS pliant, & Green Packaging pliant per EU Directive 2002/95. This package is also manu- - High Linearity Performance: factured with green molding pounds that contain no antimony +21 d Bm IS-95 Channel Pwr at -55 d Bc ACP trioxide nor halogenated fire retardants. +20.7 d Bm W-CDMA Channel Pwr at -50d Bc ACP VC1 VBIAS RFIN .. Active Bias RFOUT/ VC2 +47 d Bm Typ. OIP3 - On-chip Active Bias Control - High Gain: 24 d B Typ. at 1960 MHz - Patented High Reliability Ga As HBT Technology - Surface-Mountable Plastic Package Applications - W-CDMA Systems - PCS Systems - Multi-Carrier Applications VPC2 Symbol f0 P 1d B Parameters: Test Conditions: Z0 = 50 Ohms Temp = 25 ºC, Vcc = 5.0V Frequency of Operation Output Power at 1d B pression[1] Adjacent Channel Power [1] IS-95 @ P OUT = 21.0 d Bm W-CDMA @ P OUT = 20.7 d Bm Small Signal Gain Input VSWR [1,2] [1,2] Units MHz f = 1960 MHz f = 2140 MHz f = 1960 MHz f = 2140 MHz f = 1960 MHz f = 2140 MHz f = 1960 MHz f = 2140 MHz d Bm Min. 1700 Typ. Max. 2200 29.5 29.5 -55.0 -50.0 22.5 24.0 23.5 1.6:1 1.6:1 46.5 47.0 5.5 5.5 360 ACP d Bc -47.0 25.0 S 21 VSWR OIP 3 NF d B d Bm d B Output Third...