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SPB-2026Z - InGaP Amplifier

General Description

Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a surface-mountable plastic encapsulated package.

Key Features

  • an input power detector, on/off power control, ESD protection, excellent overall robustness and a hand reworkable and thermally enhanced SOF-26 package. This product is RoHS and WEEE compliant. V c c = 5V SPB-2026Z 1.7-2.2GHz 2W InGaP Amplifier Pb RoHS Compliant & Green Package SOF-26 Package Product Features.
  • P1dB = 33.8dBm @ 5V, 1960 MHz ACP = -45dBc with 25 dBm Ch. Pwr. @ 1960 MHz On-chip Input Power Detector Low Thermal Resistan.

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Datasheet Details

Part number SPB-2026Z
Manufacturer Sirenza Microdevices
File Size 343.87 KB
Description InGaP Amplifier
Datasheet download datasheet SPB-2026Z Datasheet

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Other Datasheets by Sirenza Microdevices

Part Number Description
SPB-3018 Medium Power Active Bias InGaP/GaAs HBT Amplifier
SPB-3018Z Medium Power Active Bias InGaP/GaAs HBT Amplifier

Full PDF Text Transcription (Reference)

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Preliminary Product Description Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is well suited for use as a driver stage in macro/micro-cell infrastructure equipment or as the final output stage in pico-cell infrastructure equipment. It can run from a 3V to 6V supply. It is prematched to ~5 ohms on the input for broadband performance and ease of matching at the board level.