SPF-2086T Datasheet | Sirenza Microdevices

Description Sirenza Microdevices’ SPF-2086T is a high performance 0.25µm p HEMT Gallium Arsenide FET with Schottky barrier gates. This 300µm device is ideally biased at 3V,20m A for lowest noise performance and battery powered requirements. At 5V,40m A the device delivers excellent output TOI of 32 d Bm. It provides ideal performance as driver stages in many mercial, industrial and military LNA applications. Low Noise p HEMT Ga As FET - 12 GHz Operation 35 30 Gain, Gmax (d B) Typical Gain Performance 3v, 20m A 5v, 40m A 25 20 15 10 5 0 0 2 4 6 Gmax Gain Product Features - 22 d B Gmax at 1.9 GHz - 0.4 d B FMIN at 1.9 GHz - +32 d Bm Output IP3 - +20 d Bm Output Power at 1d B pression Applications - LNA for Analog and Digital Wireless Systems - 3G, Cellular, PCS - Fixed Wireless, Pager Systems - Driver Stage for low power applications Test C ondition [1] = 100% Tested U nits Min. Typ. Max. .. Frequency (GHz) Symbol D evice C haracteristics, T = 25°C VDS=3V, IDQ=20m A (unless otherw ise noted) Gmax Maxi mum Avai lable Gai n ZS=ZS- , ZL=ZL- Inserti on Gai n ZS=ZL= 50 Ohms Mi ni mum Noi se Fi gure ZS=ΓOPT , ZL=ZLOPT Output Thi rd Order Intercept Poi nt ZS=ZSOPT , ZL=ZLOPT Output 1d B C ompressi on Poi nt ZS=ZSOPT, ZL=ZLOPT Saturated D rai n C urrent VDS = VDSP, VGS= 0V Tranconductance: VDS = VDSP, VGS= -0.25V Pi nch-Off Voltage: VDS = 2.0V, IDS = 150µA Gate-to-Source Breakdown Voltage IGS = 0.3m A, drai n open Gate-to-D rai n Breakdown Voltage IGD = 0.3m A, VGS = -3.0V Thermal Resi stance, juncti on-to-lead f f f f = = = = 0.9 GHz 1.9 GHz 4.0 GHz [1] 12.0 GHz [1] [1] d B d B d B d B d B d B d B d B d B d B m d B m d B m d B m m A m S 16.8 8.4 16.0 30 -1.5 - 25.2 21.8 18.7 9.3 17.7 0.3 0.4 0.5 0.7 32 28 20 15 85 112 -1.0 -17 -17 110 19.4 140 -0.5 -8 -8 - S 21 f = 1.9 GHz f f f f = = = = 1 2 4 6 GHz GHz GHz GHz FMIN OIP3 P 1d B IDSS gm VP BVGS BVGD Rth VDS=5.0V, IDQ=40m A VDS=3.0V, IDQ=20m A VDS=5.0V, IDQ=40m A VDS=3.0V, IDQ=20m A [1] [1] [1]...