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SPF-2086T - Low Noise pHEMT GaAs FET

General Description

Sirenza Microdevices’ SPF-2086T is a high performance 0.25µm pHEMT Gallium Arsenide FET with Schottky barrier gates.

This 300µm device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements.

At 5V,40mA the device delivers excellent output TOI of 32 dBm.

Key Features

  • 22 dB Gmax at 1.9 GHz.
  • 0.4 dB FMIN at 1.9 GHz.
  • +32 dBm Output IP3.
  • +20 dBm Output Power at 1dB Compression.

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Datasheet Details

Part number SPF-2086T
Manufacturer Sirenza Microdevices
File Size 608.90 KB
Description Low Noise pHEMT GaAs FET
Datasheet download datasheet SPF-2086T Datasheet

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Full PDF Text Transcription (Reference)

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Product Description Sirenza Microdevices’ SPF-2086T is a high performance 0.25µm pHEMT Gallium Arsenide FET with Schottky barrier gates. This 300µm device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At 5V,40mA the device delivers excellent output TOI of 32 dBm. It provides ideal performance as driver stages in many commercial, industrial and military LNA applications. SPF-2086T Low Noise pHEMT GaAs FET 0.1 - 12 GHz Operation 35 30 Gain, Gmax (dB) Typical Gain Performance 3v, 20mA 5v, 40mA 25 20 15 10 5 0 0 2 4 6 Gmax Gain Product Features • 22 dB Gmax at 1.9 GHz • 0.4 dB FMIN at 1.