STA-6033 Datasheet | Sirenza Microdevices

Description Sirenza Microdevices’ STA-6033 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with In Ga P on Ga As device technology and fabricated with MOCVD for an ideal bination of low cost and high reliability. This product is specifically designed as a final stage for 802.11a equipment in the 4.9 - 5.9 GHz band. It can run from a 3.0V to 3.6V supply. Optimized on-chip impedance matching circuitry provides a 50Ω nominal RF input impedance. A single external output matching circuit covers the entire 4.9-5.9GHz band. The external output match allows for load line optimization for other applications or optimized performance over narrower bands. It is designed as a drop in replacement for similar parts in its class. This product is available in a Ro HS pliant and Green package with matte tin finish, designated by the “Z” package suffix. STA-6033 STA-6033Z Pb Ro HS pliant & Green Package - 5.9 GHz 3.3V Power Amplifier 16 pin 3mm x 3mm QFN Product Features - - - - - - - - - - 802.11a 54Mb/s Class AB Performance Pout = 18d Bm @ 3% EVM, 3.3V, 210m A High Gain = 27d B Output Return Loss < -12d B for Linear Tune On-chip Output Power Detector Simultaneous 4.9- 5.9GHz Broadband Pin patible with Microsemi LX5506 Robust - Survives RF Input Power = +20d Bm Power up/down control < 1μs Functional Block Diagram Vcc Power Up/Down Control Active Bias Active Bias Active Bias .. RFIN RFOUT Applications 802.11a WLAN, OFDM, 5.8GHz ISM Band 802.16 Wi Max, Fixed Wireless, UNII Unit MHz d Bm Min. 4900 26.5 24.0 27.5 22.0 25.5 29.5 24.0 18 18 -38 5.7 11 8 15 12 0.8 to 1.5 130 165 1.5 5 28 100 190 -34 31.5 26.0 Typ. Max. 5900 Power Detector Vout Key Specifications Symbol f O P1d B S21 Pout IM3 NF IRL ORL Vdet Range Icq IVPC ILEAK Rth, j-l Parameters: Test Conditions, App circuit page 4 Z0 = 50Ω, VCC = Vpc = 3.3V, Icq = 165m A, TBP = 30ºC Frequency of Operation Output...