SXT-289 Datasheet | Sirenza Microdevices

Product Description Sirenza Microdevices’ SXT-289 amplifier is a high efficiency Ga As Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 1800-2500 MHz cellular, ISM, WLL and Wideband CDMA applications. Its high linearity makes it an ideal choice for multi-carrier as well as digital applications. Typical IP3, P1d B, Gain 45 40 35 30 25 20 15 10 5 0 .. 1800-2500 MHz Medium Power Ga As HBT Amplifier Product Features - Patented High Reliability Ga As HBT Technology - High Output 3rd Order Intercept : +42 d Bm typ. - at 2450 MHz Surface-Mountable Power Plastic Package IP3 P1d B Gain Applications - Balanced Amplifier Configuration App. Note (AN-011) 1960 MHz 2140 MHz 2450 MHz - PCS Systems - WLL, Wideband CDMA Systems - ISM Systems Symbol Parameters: Test Conditions: Z0 = 50 Ohms, Ta = 25°C Output Power at 1d B pression f = 1960 MHz f = 2140 MHz f = 2450 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz V S = 8V RBIAS = 27 Ohms VD = 5 V typ. Units d B m d B m d B m d B d B d B d B m d B m d B m d B d B d B m A ° C/W Min. Typ. 23.5 23.5 23.0 15.0 15.0 13.8 1.4:1 1.6:1 1.6:1 Max. P 1d B S 21 Small signal gain S11 Input...