• Part: SPF-3043
  • Description: Low Noise Phemt GAAS Fet
  • Manufacturer: Sirenza
  • Size: 195.51 KB
Download SPF-3043 Datasheet PDF
Sirenza
SPF-3043
SPF-3043 is Low Noise Phemt GAAS Fet manufactured by Sirenza.
Description Sirenza Microdevices’ SPF-3043 is a high performance 0.25µm p HEMT Gallium Arsenide FET. This 300µm device is ideally biased at 3V,20m A for lowest noise performance and battery powered requirements. At 5V,40m A the device can deliver OIP3 of 32d Bm. It provides ideal performance as a driver stage in many mercial and industrial LNA applications. Typical Gain Performance 35 30 25 20 15 3V,20m A 5V,40m A Low Noise p HEMT Ga As FET Product Features - - - - - - - DC-10 GHz Operation 0.5 d B NFMIN @ 2 GHz 22 d B GMAX @ 2 GHz +32 d Bm OIP3 (5V,40m A) +20 d Bm P1d B (5V,40m A) Low Current, Low Cost Apps circuits available for key bands Gain, Gmax (d B) Gmax Gain 10 5 0 2 4 6 8 10 Applications - - - - Analog and Digital Wireless Systems 3G, Cellular, PCS Fixed Wireless, Pager Systems Driver Stage for Low Power Applications Test Frequency 0.9 GHz 1.9 GHz U nits Min. Typ. 26.5 23.4 0.32 0.54 18.5 20.0 1.05 14.0 26.0 15.0 -1.1 30 90 15.3 28.5 17.0 -0.8 60 150 -10 -10 150 5.5 55 -8 -8 -0.5 120 21.5 1.40 Max. Frequency (GHz) Symbol D evice C haracteristics Test C onditions GMAX NFMIN S 21 NF Gai n OIP3 P 1d B VP IDSS gm BVGSO BVGDO Rth V DS IDS Maxi mum Avai lable Gai n Mi ni mum Noi se Fi gure Inserti on Gai n [1] Noi se Fi gure Gai n [2] [2] .. VDS=5V, IDQ=40m A, 25ºC (unless otherw ise noted) ZS=ZS- , ZL=ZL- d B ZS=ΓOPT , ZL=ZL- ZS=ZL= 50Ω LNA Appli cati on C i rcui t Board LNA Appli cati on C i rcui t Board LNA Appli cati on C i rcui t Board LNA Appli cati on C i rcui t Board VDS= 2V, IDS= 0.1 m A [1] 0.9 GHz 1.9 GHz 0.9 GHz 1.9 GHz 1.9 GHz 1.9 GHz 1.9 GHz d B d B d B d B d B m d B m V m A m S V V ºC /W V m A Output Thi rd Order Intercept Poi nt [2] Output 1d B C ompressi on Poi nt [2] Pi nchoff Voltage [1] Saturated D rai n C urrent Transconductance [1] VDS= 2V, VGS= 0 V VDS= 2V, VGS= 0 V [1] Gate-Source Breakdown Voltage Gate-D rai n Breakdown Voltage Thermal Resi stance Operati ng Voltage Operati ng C urrent [1] IGS= 0.03 m A, drai n open IGD= 0.03 m A, source...