SKD4N65F - 650V N-Channel MOSFET

Product Overview

Datasheet Details

Part number	SKD4N65F
Manufacturer	SkySilicon
File Size	805.71 KB
Description	650V N-Channel MOSFET
Datasheet	SKD4N65F Datasheet
Additional preview pages of the SKD4N65F datasheet.

Product details

Description

Application Power Supply Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol Parameter Maximum VDSS VGSS Drain-to-Source Voltage Gate-to-Source Voltage 650 ±30 ID Continuous Drain Current TC=25°C TC=100°C 4 2.2 PD TJ, TSTG Maximum Power Dissipation Junction & St

Features

S.
650V/4A RDS(ON)= 3Ω max@ VGS=10V.
Lead free and Green Device Available.
Low Rds-on to Minimize Conductive Loss.
High avalanche Current.
PIN.

📁 Similar Datasheet

SKD100 - (SKD60 / SKD100) Power Bridge Rectifiers (Semikron)
SKD100 - Power Bridge Rectifiers (Semikron)
SKD110 - Power Bridge Rectifiers (Semikron International)
SKD115 - Power Bridge Rectifiers (Semikron International)
SKD116 - Power Bridge Rectifiers (Semikron International)
SKD145 - Power Bridge Rectifiers (Semikron International)
SKD146 - Power Bridge Rectifiers (Semikron International)
SKD160 - Power Bridge Rectifiers (Semikron International)

Other Datasheets by SkySilicon

Published: Sep 18, 2017 |