SKD4N65F - 650V N-Channel MOSFET

General Description

Application Power Supply Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol Parameter Maximum VDSS VGSS Drain-to-Source Voltage Gate-to-Source Voltage 650 ±30 ID Continuous Drain Current TC=25°C TC=100°C 4 2.2 PD TJ, TSTG Maximum Power Dissipation Junction & St

Key Features

S.
650V/4A RDS(ON)= 3Ω max@ VGS=10V.
Lead free and Green Device Available.
Low Rds-on to Minimize Conductive Loss.
High avalanche Current.
PIN.

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SKD4N65F 650v n-channel mosfet by SkySilicon - Datasheet Preview

Datasheet Details

Part number	SKD4N65F
Manufacturer	SkySilicon
File Size	805.71 KB
Description	650V N-Channel MOSFET
Datasheet	SKD4N65F Datasheet

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SkySilicon SKD4N65F 650V N-Channel MOSFET  FEATURES  650V/4A RDS(ON)= 3Ω max@ VGS=10V  Lead free and Green Device Available  Low Rds-on to Minimize Conductive Loss  High avalanche Current  PIN DESCRIPTION  Application  Power Supply Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol Parameter Maximum VDSS VGSS Drain-to-Source Voltage Gate-to-Source Voltage 650 ±30 ID Continuous Drain Current TC=25°C TC=100°C 4 2.2 PD TJ, TSTG Maximum Power Dissipation Junction & Storage Temperature Range TC=25°C TC=100°C 25 10 -55~150 Unit V V A W °C Thermal Characteristics Symbol Parameter Rθjc Thermal Resistance-Junction to Case Rθja Thermal Resistance-Junction to Ambient Rev. 0.9 – Mar 1 Typical 5.5 62.