SKD4N65F Description
0.9 Mar 1 Typical 5.5 62.5 Unit ℃/W SkySilicon SkySilicon SKD4N65F 650V N-Channel MOSFET (TA=25°C unless otherwise noted) Symbol Parameter Test Conditions Min. Static Characteristics BVDSS Drain-Source Breakdow.
SKD4N65F Key Features
- 650V/4A RDS(ON)= 3Ω max@ VGS=10V
- Lead free and Green Device Available
- Low Rds-on to Minimize Conductive Loss
- High avalanche Current
- PIN DESCRIPTION
- Application
- Power Supply