SKD4N65F
FEATURES
- 650V/4A RDS(ON)= 3Ω max@ VGS=10V
- Lead free and Green Device Available
- Low Rds-on to Minimize Conductive Loss
- High avalanche Current
- PIN DESCRIPTION
- Application
- Power Supply
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Symbol
Parameter
Maximum
VDSS VGSS
Drain-to-Source Voltage Gate-to-Source Voltage
650 ±30
ID Continuous Drain Current
TC=25°C TC=100°C
4 2.2
PD TJ, TSTG
Maximum Power Dissipation Junction & Storage Temperature Range
TC=25°C TC=100°C
25 10 -55~150
Unit
W °C
Thermal Characteristics
Symbol
Parameter
Rθjc Thermal Resistance-Junction to Case
Rθja Thermal Resistance-Junction to Ambient
Rev. 0.9
- Mar
Typical
5.5 62.5
Unit
℃/W
Sky Silicon
Sky Silicon
650V N-Channel...
