AP137-501 Datasheet | Skyworks Solutions

Features - First Quad-Band In Ga P HBT GSM PA Module - 3.2 V Nominal Operating Voltage - 50 Ω Internally Matched Input and Output - High Power Added Efficiency: 55% for GSM and 50% for DCS and PCS - Small Size: 10 x 8 x 1.6 mm MCM Land Grid Array Package - Low Current Standby Mode: < 30 µA - Integral Band Select and Analog Power Control - GPRS Class 12 Capable MOLD CAP 0.04 (1.05 mm) ± 0.002 (0.05 mm) PIN 1 INDICATOR -501 TOP VIEW 0.394 (10.0 mm) ± 0.004 (0.1 mm) BOTTOM VIEW 0.075 (1.91 mm) BSC 0.069 (1.75 mm) ± 0.002 (0.051 mm) 16 1 0.075 (1.91 mm) BSC 0.315 (8.0 mm) ± 0.004 (0.1 mm) 0.082 (2.09 mm) ± 0.002 (0.051 mm) 0.069 (1.75 mm) ± 0.002 (0.051 mm) 0.046 (1.18 mm) ± 0.002 (0.051 mm) SIDE VIEW 0.06 (1.56 mm) ± 0.004 (0.10 mm) Description The AP137-501 is a high performance power amplifier module designed for use as the final amplification stage in multi-band GSM and GPRS mobile phone applications (824- 849, 880- 915, 1710- 1785 and 1850- 1910 MHz). It features 3-cell battery operation, a band select switch, a single positive analog power control input for all three bands, and exceptional power added efficiency. The AP137-501 also incorporates an advanced silicon bipolar power control ASIC providing an outstandingly smooth and flat power control response, greatly improving the ease of use. The amplifier IC’s are manufactured on an advanced In Ga P HBT process, known industry-wide for its excellent reliability, ruggedness and performance. The amplifier module is pletely self-contained, requiring no external matching ponents, and packaged in a small land grid array package. Absolute Maximum Ratings Characteristic Supply Voltage VCC, Standby Mode, VAPC < 0.3 (No RF Input Power) Power Control Voltage Band Select Voltage Input Power (CW) Operating Case Temperature Storage Temperature Value 6.5 V Max. 4 V Max. 4 V Max. 15 d Bm Max. -35 to +85°C -45 to 120°C DC Specifications Parameter Supply Voltage Leakage Current Band Select Voltage Band Select Current Power Control...