AS179-000 Datasheet | Skyworks Solutions

Features Broadband: 300 k Hz- 3 GHz Low insertion loss: 0.3 d B @ 900 MHz - High isolation: 25 d B @ 900 MHz - P 1 d B: +30 d Bm @ 3 V control voltage - IP3: +43 d Bm @ 3 V control voltage - Low DC power consumption - 100% RF tested in die form - Lead (Pb)-free - ESD class 0 - - RF2 J3 V2 Control Voltage 2 DC blocks required on all RF ports for positive control voltage operation. Absolute Maximum Ratings Characteristic RF input power (VCTL 0 V/7 V) Value 6 W, f > 500 MHz 2 W, 100 > f > 500 MHz 315 m W, f = 300 k Hz(1) -0.2 V ≤ VC ≤ 8 V -40 °C to +85 °C -40 °C to +150 °C Control voltage range Operating temperature range Storage temperature range Description The AS179-000 is a monolithic SPDT switch fabricated using Skyworks proprietary Ga As PHEMTs as the switching elements. This wideband switch operates with RF signals from 300 k Hz- 3 GHz. The RF signal paths within the AS179-000 are bilateral. The J1 and J2 RF input/output terminals are reflective. Switching is controlled via a pair of high-impedance control voltage inputs. Depending upon the logic voltage level applied to the control voltage pins, the mon RF pin (J1) is connected to one of two switched RF pins (J2 or J3) via a low insertion loss path, while the path between the RF mon and the other RF pin is in its high isolation state. DC power consumption is very low, 100 µA nominal with control voltage of 3 V. The switch can operate over the temperature range of -40° C to 85° C. Performance is guaranteed only under the conditions listed in the specifications table and is not guaranteed under the full range(s) described by the Absolute Maximum specifications. Exceeding any of the absolute maximum/minimum specifications may result in permanent damage to the device and will void the warranty. 1. Derate linearly for 300 k Hz < f < 100 MHz. CAUTION: Although this device is designed to be as robust as possible, Electrostatic Discharge (ESD) can damage this device. This device must be protected at all times from ESD....