DSG9500-000 Datasheet | Skyworks Solutions

Features Low capacitance Low resistance - Fast switching - Oxide-nitride passivated - Durable construction - High voltage - - Description The DSG9500-000 is designed for low resistance, low capacitance and fast switching time. The oxide-nitride passivation layers provide reliable operation and stable junction parameters that provide plete sealing of the junction permitting use in assemblies with some degree of moisture sealing. The DSG9500-000 is ideal for microstrip or stripline circuits and for circuits requiring high isolation from a series mounted diode such as broad band multi-throw switches, phase shifters, limiters, attenuators and modulators. Absolute Maximum Ratings Characteristic Operating temperature Storage temperature Power dissipation (derate linearly to zero @ 175 °C) Typical lead strength Value -65 °C to +150 °C -65 °C to +200 °C 250 m W 8 grams pull Performance is guaranteed only under the conditions listed in the specifications table and is not guaranteed under the full range(s) described by the Absolute Maximum specifications. Exceeding any of the absolute maximum/minimum specifications may result in permanent damage to the device and will void the warranty. CAUTION: Although this device is designed to be as robust as possible, Electrostatic Discharge (ESD) can damage this device. This device must be protected at all times from ESD. Static charges may easily produce potentials of several kilovolts on the human body or equipment, which can discharge without detection. Industry-standard ESD precautions must be employed at all times. Low Capacitance Planar Beam Lead Diode Part Number DSG9500- 000 Breakdown Voltage @ 10 µA (V) Min. 200 Capacitance Total @ 50 V, 1 MHz (p F) Max. 0.02 Series Resistance (From Ins. Loss @ 3 GHz, 50 m A)(1) (Ω) Max. 4.0 Minority Carrier Lifetime IF = 10 m A, IR = 6 m A (ns) Typ. 250 25 169-001 RF Switching Time TS (ns)(2) Outline Drawing Number 1. Total capacitance calculated from isolation at 9 GHz zero bias. Series...