APN1001 Datasheet | Skyworks Solutions

.Data Sheet.co.kr APPLICATION NOTE APN1001: Circuit Models for Plastic Packaged Microwave Diodes Abstract This paper reports on the measurement and establishment of circuit models for SOT-23 and SOD-323 packaged diodes. Results indicate that the 1.5 n H estimate for the SOT-23 is a useful result, as is 1.2 n H for SOD-323 single packaged diodes. It was also determined that the effective inductance of the SOT-23 may be reduced to approximately 0.4 n H by adding a second bond wire and modifying the microstrip line. Other lead configurations, including parallel bond wires and mon cathode configurations, were also studied. SOT-23 SOD-323 Figure 1. Diode Package Styles Package Modeling Introduction Discrete, low-cost, surface mount semiconductor diodes are attractive choices for UHF and microwave applications where package parasitic may have a significant impact on performance. The most mon package styles are the SOT-23 and the SOD-323 (Figure 1) which were neither designed nor intended for RF service. A primary limitation to their high-frequency performance, particularly in PIN diode shunt connected switches, is parasitic package inductance, which limits high-frequency isolation. The model information available from vendors of these devices has been generally limited to estimates of inductance, typically 1.5 n H, for single junction SOT-23 diodes. Establishing a better model will enable circuit designers to better predict performance and possibly give the manufacturer alternative designs to reduce package parasitic effects. L = 0.05 n H Network Analysis To create a high-frequency device model S-parameter, measurements were taken over a wide frequency band so that resonance and other high order effects would be included in the measurements. This procedure utilizes an HP 8510C vector network analyzer. The package under test was inserted into an Inter Continental Microwave test fixture as a series connected element. This fixture uses a Thru-Reflect-Line...