DDB2265-250 - Silicon Schottky Barrier Diodes

This page provides the datasheet information for the DDB2265-250, a member of the DDB2503-220 Silicon Schottky Barrier Diodes family.

Datasheet Summary

Description

Our packaged Schottky barrier detector diodes are designed for applications through 20 GHz in the Ka band.

They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction.

Features

Available in both P-type and N-type low barrier designs.
Low 1/f noise.
Packages rated MSL1, 260 C per JEDEC J-STD-020.

Skyworks

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Datasheet Details

Part number	DDB2265-250
Manufacturer	Skyworks
File Size	588.43 KB
Description	Silicon Schottky Barrier Diodes
Datasheet	DDB2265-250 Datasheet
Additional preview pages of the DDB2265-250 datasheet.

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Other Datasheets by Skyworks

DDB2265-220 - Silicon Schottky Barrier Diodes
DDB2265-230 - Silicon Schottky Barrier Diodes
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DDB2503-000 - Silicon Schottky Barrier Diode Bondable Chips and Beam Leads
DDB2503-220 - Silicon Schottky Barrier Diodes
DDB2503-230 - Silicon Schottky Barrier Diodes
DDB2503-250 - Silicon Schottky Barrier Diodes
DDB2504-000 - Silicon Schottky Barrier Diode Bondable Chips and Beam Leads

Full PDF Text Transcription

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DATA SHEET Silicon Schottky Barrier Diodes in Hermetic and Epoxy Ceramic Packages Applications  Detectors  Mixers Features  Available in both P-type and N-type low barrier designs  Low 1/f noise  Packages rated MSL1, 260 C per JEDEC J-STD-020 Description Our packaged Schottky barrier detector diodes are designed for applications through 20 GHz in the Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. P-type silicon is used to obtain superior 1/f noise characteristics. N-type silicon is also available.

Published: Jun 28, 2019 |