DME2282-251 Description
The Isolink silicon Schottky barrier mixer diodes are designed for applications through 20 GHz. Schottky barrier mixer diodes are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance with a narrow spread of capacitance values for close impedance control.
DME2282-251 Key Features
- Low 1/f noise
- Low intermodulation distortion
- Hermetically sealed packages
- Statistical process control wafer fabrication
- Packages rated MSL1, 260 C per JEDEC J-STD-020)