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DME2957-220 - Silicon Beam-Lead Schottky Mixer Diodes

This page provides the datasheet information for the DME2957-220, a member of the DME2127-220 Silicon Beam-Lead Schottky Mixer Diodes family.

Description

The Isolink silicon Schottky barrier mixer diodes are designed for applications through 20 GHz.

Schottky barrier mixer diodes are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction.

Features

  • Low 1/f noise.
  • Low intermodulation distortion.
  • Hermetically sealed packages.
  • Statistical process control wafer fabrication.
  • Packages rated MSL1, 260 C per JEDEC J-STD-020).

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Datasheet preview – DME2957-220

Datasheet Details

Part number DME2957-220
Manufacturer Skyworks
File Size 1.15 MB
Description Silicon Beam-Lead Schottky Mixer Diodes
Datasheet download datasheet DME2957-220 Datasheet
Additional preview pages of the DME2957-220 datasheet.

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Full PDF Text Transcription

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DATA SHEET DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer Diodes – Singles, Pairs, and Quads in Ceramic Hermetic Packages Applications  Microwave integrated circuits  Mixers  Detectors Features  Low 1/f noise  Low intermodulation distortion  Hermetically sealed packages  Statistical process control wafer fabrication  Packages rated MSL1, 260 C per JEDEC J-STD-020) Description The Isolink silicon Schottky barrier mixer diodes are designed for applications through 20 GHz. Schottky barrier mixer diodes are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance with a narrow spread of capacitance values for close impedance control.
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