DMF2011-254 - Silicon Beam-Lead Schottky Mixer Diodes

This page provides the datasheet information for the DMF2011-254, a member of the DMF2820-220 Silicon Beam-Lead Schottky Mixer Diodes family.

Datasheet Summary

Description

The Isolink silicon Schottky barrier mixer diodes are designed for applications through 20 GHz.

Schottky barrier mixer diodes are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction.

Features

Low 1/f noise.
Low intermodulation distortion.
Hermetically sealed packages.
Statistical process control wafer fabrication.
Packages rated MSL1, 260 C per JEDEC J-STD-020).

Skyworks

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Datasheet Details

Part number	DMF2011-254
Manufacturer	Skyworks
File Size	1.17 MB
Description	Silicon Beam-Lead Schottky Mixer Diodes
Datasheet	DMF2011-254 Datasheet
Additional preview pages of the DMF2011-254 datasheet.

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Full PDF Text Transcription

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DATA SHEET DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer Diodes – Singles, Pairs, and Quads in Ceramic Hermetic Packages Applications  Microwave integrated circuits  Mixers  Detectors Features  Low 1/f noise  Low intermodulation distortion  Hermetically sealed packages  Statistical process control wafer fabrication  Packages rated MSL1, 260 C per JEDEC J-STD-020) Description The Isolink silicon Schottky barrier mixer diodes are designed for applications through 20 GHz. Schottky barrier mixer diodes are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance with a narrow spread of capacitance values for close impedance control.

Published: Jun 28, 2019 |