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DMJ2777-220 - Silicon Beam-Lead Schottky Mixer Diodes

Download the DMJ2777-220 datasheet PDF. This datasheet also covers the DMJ2823-220 variant, as both devices belong to the same silicon beam-lead schottky mixer diodes family and are provided as variant models within a single manufacturer datasheet.

Description

The Isolink silicon Schottky barrier mixer diodes are designed for applications through 20 GHz.

Schottky barrier mixer diodes are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction.

Features

  • Low 1/f noise.
  • Low intermodulation distortion.
  • Hermetically sealed packages.
  • Statistical process control wafer fabrication.
  • Packages rated MSL1, 260 C per JEDEC J-STD-020).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (DMJ2823-220-Skyworks.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number DMJ2777-220
Manufacturer Skyworks
File Size 1.15 MB
Description Silicon Beam-Lead Schottky Mixer Diodes
Datasheet download datasheet DMJ2777-220 Datasheet

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Other Datasheets by Skyworks

Part Number Description
DMJ2777-250 Silicon Beam-Lead Schottky Mixer Diodes
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DMJ2768-225 Silicon Beam-Lead Schottky Mixer Diodes
DMJ2768-235 Silicon Beam-Lead Schottky Mixer Diodes

Full PDF Text Transcription

Click to expand full text
DATA SHEET DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer Diodes – Singles, Pairs, and Quads in Ceramic Hermetic Packages Applications  Microwave integrated circuits  Mixers  Detectors Features  Low 1/f noise  Low intermodulation distortion  Hermetically sealed packages  Statistical process control wafer fabrication  Packages rated MSL1, 260 C per JEDEC J-STD-020) Description The Isolink silicon Schottky barrier mixer diodes are designed for applications through 20 GHz. Schottky barrier mixer diodes are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance with a narrow spread of capacitance values for close impedance control.
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