Datasheet4U Logo Datasheet4U.com

DMJ2823-220 - Silicon Beam-Lead Schottky Mixer Diodes

Description

The Isolink silicon Schottky barrier mixer diodes are designed for applications through 20 GHz.

Schottky barrier mixer diodes are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction.

Features

  • Low 1/f noise.
  • Low intermodulation distortion.
  • Hermetically sealed packages.
  • Statistical process control wafer fabrication.
  • Packages rated MSL1, 260 C per JEDEC J-STD-020).

📥 Download Datasheet

Datasheet Details

Part number DMJ2823-220
Manufacturer Skyworks
File Size 1.15 MB
Description Silicon Beam-Lead Schottky Mixer Diodes
Datasheet download datasheet DMJ2823-220 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
DMJ70H1D0SV3 N-Channel MOSFET INCHANGE
DMJ70H1D0SV3 N-CHANNEL MOSFET DIODES
DMJ70H1D3SH3 N-CHANNEL MOSFET Diodes
DMJ70H1D3SH3 N-Channel MOSFET INCHANGE
DMJ70H1D3SI3 N-CHANNEL MOSFET Diodes

Other Datasheets by Skyworks

Part Number Description
DMJ2823-250 Silicon Beam-Lead Schottky Mixer Diodes
DMJ2823-000 Silicon Beam-Lead Schottky Mixer Diode Bondable Beam-Lead Devices
DMJ2824-000 Silicon Beam-Lead Schottky Mixer Diode Bondable Beam-Lead Devices
DMJ2824-220 Silicon Beam-Lead Schottky Mixer Diodes
DMJ2824-230 Silicon Beam-Lead Schottky Mixer Diodes

Full PDF Text Transcription

Click to expand full text
DATA SHEET DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer Diodes – Singles, Pairs, and Quads in Ceramic Hermetic Packages Applications  Microwave integrated circuits  Mixers  Detectors Features  Low 1/f noise  Low intermodulation distortion  Hermetically sealed packages  Statistical process control wafer fabrication  Packages rated MSL1, 260 C per JEDEC J-STD-020) Description The Isolink silicon Schottky barrier mixer diodes are designed for applications through 20 GHz. Schottky barrier mixer diodes are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance with a narrow spread of capacitance values for close impedance control.
Published: |