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DMJ2852-000 - Silicon Beam-Lead Schottky Mixer Diode Bondable Beam-Lead Devices

Download the DMJ2852-000 datasheet PDF. This datasheet also covers the DMJ2823-000 variant, as both devices belong to the same silicon beam-lead schottky mixer diode bondable beam-lead devices family and are provided as variant models within a single manufacturer datasheet.

General Description

Skyworks beam-lead silicon Schottky barrier mixer diodes are designed for applications through 40 GHz.

The beam-lead design reduces the problem of bonding to the very small area characteristic of low capacitance junctions.

Key Features

  • Low 1/f noise.
  • Low intermodulation distortion.
  • Statistical Process Control wafer fabrication Skyworks Green™ products are compliant with all applicable legislation and are halogen-free. For additional information, refer to Skyworks Definition of Green™, document number SQ04-0074.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (DMJ2823-000-Skyworks.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for DMJ2852-000 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DMJ2852-000. For precise diagrams, and layout, please refer to the original PDF.

DATA SHEET DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer Diode (Singles, Pairs, and Quads) Bondable Beam-Lead Devices Applications  Microwave Integrated Circuit...

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Bondable Beam-Lead Devices Applications  Microwave Integrated Circuits  Mixers  Detectors Features  Low 1/f noise  Low intermodulation distortion  Statistical Process Control wafer fabrication Skyworks Green™ products are compliant with all applicable legislation and are halogen-free. For additional information, refer to Skyworks Definition of Green™, document number SQ04-0074. Description Skyworks beam-lead silicon Schottky barrier mixer diodes are designed for applications through 40 GHz. The beam-lead design reduces the problem of bonding to the very small area characteristic of low capacitance junctions.