Skyworks Solutions SC02201518
The devices have a dielectric composed of thermally grown silicon dioxide over which a layer of silicon nitride is deposited. This dielectric possesses a low temperature coefficient of capacitance and very high insulation resistance.| Part No. | SC02201518 |
|---|---|
| Datasheet | SC02201518 Download |
| Manufacturer |  Skyworks Solutions |
| Description | MIS Chip Capacitors |
| Buy | Stock & Price |
FEATURES
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● Readily available from stock High reliability silicon oxide–nitride dielectric Low loss—typically 0.04 dB in a 50 Ω system Operation through 26 GHz Wide temperature operation Available lead (Pb)-free, RoHS-compliant, and Green
DESCRIPTION
Skyworks MIS Chip Capacitors are available in a wide range of sizes and capacitance values. They are frequently used in applications requiring DC blocking, RF bypassing, or as a fixed capacitance tuning element in filters, oscillators, and matching networks. The devices also exhibit excellent long-term stability making them suitable for high-reliability applications. The capacitors have a high dielectric breakdown which permits the use of thin dielectrics resulting in large capacitance per unit area. The temperature coefficient is less that 50 ppm/°C, and operation is suitable from -65 °C to 200 °C. Compared to ceramic capacitors, Skyworks MIS chip capacitors offer higher Q, and a lower insertion loss of 0.04 dB, in a 50 Ω system. Insulation resistance is greater than 105 M Ω.
