Slkor MMBT2222AW
NPN General Purpose Transistor
FEATURES
General purpose transistor. MMBT2222AW 3 2 1.Base 2.Emitter 1 3.Collector● Simplified outline(SOT-323) 3.COLLECTOR 1.BASE 2.EMITTER
ABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total Device Dissipation FR-5 Board Thermal Resistance, Junction-to-Ambient Junction temperature Storage temperature Symbol VCEO VCBO VEBO IC PD RèJA Tj Tstg Rating 40 75 6.0 600 150 833 150 -55 to +150 Unit V V V mA mW /W 1 MMBT2222AWELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-emitter breakdown voltage V(BR)CEO IC = 1.0 mA, IB = 0 40 V Collector-base breakdown voltage V(BR)CBO IC = 10 ìA, IE = 0 75 V Emitter-base breakdown voltage V(BR)EBO IE = 10 ìA, IC = 0 6 V Base cutoff current IBL VCE = 60 V, VEB = 3.0 V 20 nA Collector cutoff current ICEX VCE = 60 V, VEB = 3.0 V 10 nA DC current gain * HFE IC = 150 mA, VCE = 10 V 100 300 Collector-emitter saturation voltage * Ba...