SL200H120TL - IGBT

General Description

Conditions Min Typ VGE(th) Gate-Emitter Threshold Voltage IC = 1 mA, VCE = VGE 5.0 5.5

Key Features

z Short Circuit Rated 10μs z Low Saturation Voltage: VCE (sat) = 1.80V @ IC =200A , TC=25℃ z Low Switching Loss z 100% RBSOA Tested（2×Ic） z Low Stray Inductance z Lead Free, Compliant with RoHS Requirement.

SL200H120TL igbt by Slkor - Datasheet Preview

Datasheet Details

Part number	SL200H120TL
Manufacturer	Slkor
File Size	478.60 KB
Description	IGBT
Datasheet	SL200H120TL Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IGBT Module Features： z Short Circuit Rated 10μs z Low Saturation Voltage: VCE (sat) = 1.80V @ IC =200A , TC=25℃ z Low Switching Loss z 100% RBSOA Tested（2×Ic） z Low Stray Inductance z Lead Free, Compliant with RoHS Requirement Applications： z Welding Machine, Cutting Machine z Plating Power Supply, Induction Heating z SMPS, UPS SL200H 120TL IGBT, Inverter Maximum Rated Values (TC=25℃Unless otherwise specified) VCES VGES IC ICM tSC PD Collector-Emitter Blocking Voltage Gate-Emitter Voltage Continuous Collector Current TC = 80℃, TC = 25℃ Repetitive Peak Collector Current Short Circuit Withstand Time Maximum Power Dissipation per IGBT TJ = 175℃ TC = 25℃ TJmax=175℃ 1200 ±20 200 400 400 >10 1040 V V A A A μs W www.slkormicro.